SiA511DJ

New Product SiA511DJ Vishay Siliconix N- and P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 12 RDS(on) (Ω) 0.040 at VGS = 4.5 V 0.048 at VGS = 2.5 V 0.063 at VGS = 1.8 V 0.070 at VGS = - 4.5 V P-Channel - 12 0.100 at VGS = - 2.5 V 0.140 at VGS = - 1.8 V PowerPAK SC-70-6 Dual FEATURES ID (A) 4.5 a Qg (Typ.) 4.5 nC 4.5a 4.5a - 4.5a - 4.5a - 4.5 a Halogen-free TrenchFET® Power MOSFETs New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance RoHS COMPLIANT 5 nC APPLICATIONS Load Switch for Portable Devices 1 S1 G1 D1 D1 6 G2 5 2.05 mm 4 S2 D2 Part # code 2.05 mm 2 3 D2 D1 S2 Marking Code G2 EAX XXX Lot Traceability and Date code S1 D2 P-Channel MOSFET G1 Ordering Information: SiA511DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS N-Channel 12 ±8 4.5a 4.5a 4.5a, b, c 4.5a, b, c 20 4.5a 1.6b, c 6.5 5 1.9b, c 1.2b, c - 55 to 150 260 - 4.5a - 4.5a - 4.3b, c - 3.4b, c - 10 - 4.5a - 1.6b, c 6.5 5 1.9b, c 1.2b, c P-Channel - 12 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Source Drain Current Diode Current A Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperat...