SiA445EDJ

www.vishay.com SiA445EDJ Vishay Siliconix P-Channel 20 V (D-S) MOSFET PowerPAK® SC-70-6L Single D D6 S5 4 2.05 mm 1 2.05 mm Top View Marking code: BQ S 7 1 2D 3D G Bottom View FEATURES TrenchFET® power MOSFET Thermally enhanced PowerPAK SC-70 package - Small footprint area - Low on-resistance 100 % Rg tested Built in ESD protection with Zener diode Typical ESD performance: 2000 V Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -3.7 V RDS(on) max. () at VGS = -2.5 V Qg typ. (nC) ID (A) a Configuration -20 0.0165 0.0185 0.0300 23 -12 Single APPLICATIONS Smart phones, tablet PCs, mobile computing  - Battery switch - Charger switch - Load switch G P-Channel MOSFET S D ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SC-70 SiA445EDJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 300 μs) Continuous source-drain diode current Maximum power dissipation Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS PD TJ, Tstg LIMIT -20 ± 12 -12 a -12 a -11.8 b, c -9.5 b, c -50 -12 a -2.9 b, ...