SiA418DJ

SiA418DJ Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V ID (A)a 12 12 Qg (Typ.) 5 nC FEATURES TrenchFET® Power MOSFET 100 % Rg Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® SC-70-6L-Single 1 D 2 D 3 6 D 5 D S 4 S 2.05 mm Bottom View G APPLICATIONS DC/DC Converters and Synchronous Buck Converters - Lower Ringing Voltage from Soft Turn-On - High Efficiency from Fast Turn-Off - Lower Shoot-Through Possibility D 2.05 mm Marking Code APX Part # code XXX Lot Traceability and Date code S N-Channel MOSFET G Ordering Information: SiA418DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 30 ± 20 12a 12a 12a,b, c 9.7b, c 40 12a 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 W A Unit V °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb, f t5s Steady State Maximum °C/W RthJC Maximum Junction-to-Case (Drain) Notes: a. Based on package...