N-channel MOSFET
STF32N65M5, STI32N65M5 STP32N65M5, STW32N65M5
Datasheet
N-channel 650 V, 95 mΩ typ., 24 A MDmesh™ M5 Power MOSFETs in TO...
Description
STF32N65M5, STI32N65M5 STP32N65M5, STW32N65M5
Datasheet
N-channel 650 V, 95 mΩ typ., 24 A MDmesh™ M5 Power MOSFETs in TO-220FP, I²PAK, TO-220 and TO-247 packages
Features
TAB
3 12
TO-220FP
) TAB t(s 3 c 2
TO-220 1
rodu D(2, TAB) lete P G(1)
roduct(s) - Obso S(3)
I2PAK 1 2 3
3 12
TO-247
Order codes
VDS at Tjmax.
RDS(on) max.
ID
STF32N65M5
STI32N65M5 STP32N65M5
710 V
119 mΩ
24 A
STW32N65M5
Extremely low RDS(on) Low gate charge and input capacitance Excellent switching performance 100% avalanche tested
Package TO-220FP
I2PAK TO-220 TO-247
AM01475v1_noZen
Applications
Switching applications
Description
These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.
Obsolete P Product status link
STF32N65M5
STI32N65M5
STP32N65M5
STW32N65M5
DS12808 - Rev 1 - November 2018 For further information contact your local STMicroelectronics sales office.
www.st.com
STF32N65M5,STI32N65M5,STP32N65M5,STW32N65M5
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Value
Symbol
Parameter
I2PAK,
Unit
TO-220, TO-220FP
) VGS
Gate-source voltage
t(s ID
Drain current (continuous) at TC = 25 °C
c ID
Drain current (continuous) at TC = 100 °C
du IDM (1)
Drain current (pulsed)
ro ...
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