FDMA8884

FDMA8884 N-Channel Power Trench® MOSFET May 2014 FDMA8884 Single N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ Features „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A „ Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A „ High performance trench technology for extremely low rDS(on) „ Fast switching speed „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance. Application „ Primary Switch Pin 1 D D G D Bottom Drain Contact D D S Drain Source D G S D D MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) TC = 25 °C -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) TA = 25 °C (Note 1a) (Note 3) Ratings 30 ±20 8.0 6.5 25 1.9 0.7 -55 to +150 W °C A Units V V Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 65 180 °C/W Package Marking and Ordering Information Device Marking 884 Device FDMA8884 Package MicroFET 2x2 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation FDMA8884 Rev.C5 1 www.fairchildsemi.com FDMA8884 N-Channel Power Trench® MOSFET Electrical Characteristics ...