DatasheetsPDF.com

ML8205 Dataheets PDF



Part Number ML8205
Manufacturers MEILAI
Logo MEILAI
Description Battery protection
Datasheet ML8205 DatasheetML8205 Datasheet (PDF)

ML8205 DESCRIPTION The ML8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G1 D1 D2 G2 S1 S2 Schematic diagram GENERAL FEATURES ● VDS = 20V,ID = 4A RDS(ON) < 38mΩ @ VGS=2.5V RDS(ON) < 25mΩ @ VGS=4V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignme.

  ML8205   ML8205



Document
ML8205 DESCRIPTION The ML8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G1 D1 D2 G2 S1 S2 Schematic diagram GENERAL FEATURES ● VDS = 20V,ID = 4A RDS(ON) < 38mΩ @ VGS=2.5V RDS(ON) < 25mΩ @ VGS=4V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management SOT23-6 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 8205A Device ML8205 Device Package SOT23-6 Reel Size Ø180mm Tape width 8mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Limit 20 ±10 4 25 0.83 -55 To 150 Unit V V A A W ℃ VDS VGS ID IDM PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 100 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current BVDSS IDSS IGSS VGS=0V ID=250μA VDS=16V,VGS=0V VGS=±10V,VDS=0V Min 20 Typ Max Unit V 1 ±100 μA nA SHENZHEN MEILAI ELECTRONIC CO.,LTD. 1 http:www.szmeilai.com v1.0 ML8205 ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) VSD IS VGS=0V,IS=2A 0.8 1.2 2 V A td(on) tr td(off) tf Qg Qgs Qgd VDS=10V,ID=4A, VGS=4V VDD=10V,ID=1A VGS=4V,RGEN=10Ω 18.3 4.8 43.5 20 11 2.2 2.5 nS nS nS nS nC nC nC Clss Coss Crss VDS=8V,VGS=0V, F=1.0MHz 800 155 125 PF PF PF VGS(th) RDS(ON) gFS VDS=VGS,ID=250μA VGS=4V, ID=4A VGS=2.5V, ID=3A VDS=5V,ID=4A 0.5 0.8 25 38 10 1.2 30 45 V mΩ mΩ S NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. SHENZHEN MEILAI ELECTRONIC CO.,LTD. 2 http:www.szmeilai.com v1.0 ML8205 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr 90% Vdd Rl D G Vout td(on) td(off) toff tf 90% Vin Vgs Rgen VOUT 10% INVERTED 10% 90% VIN S 10% 50% 50% PULSE WIDTH Figure 1:Switching Test Circuit Figure 2:Switching Waveforms TJ-Junction Temperature(℃) ID- Drain Current (A) PD Power(W) TJ-Junction Temperature(℃) Figure 3 Power Dissipation Figure 4 Drain Current Rdson On-Resistance(Ω) ID- Drain Current (A) Vds Drain-Source Voltage (V) ID- Drain Current (A) Figure 5 Output CHARACTERISTICS Figure 6 Drain-Source On-Resistance SHENZHEN MEILAI ELECTRONIC CO.,LTD. 3 http:www.szmeilai.com v1.0 ML8205 Normalized On-Resistance Vgs Gate-Source Voltage (V) ID- Drain Current (A) TJ-Junction Temperature(℃) Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) C Capacitance (pF) Vds Drain-Source Voltage (V) Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Is- Reverse Drain Current (A) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge Figure 12 Source- Drain Diode Forward 4 http:www.szmeilai.com v1.0 SHENZHEN MEILAI ELECTRONIC CO.,LTD. ML8205 ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 13 Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance SHENZHEN MEILAI ELECTRONIC CO.,LTD. 5 http:www.szmeilai.com v1.0 ML8205 SOT23-6 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) NOTES: 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. SHENZHEN MEILAI ELECTRONIC CO.,LTD. 6 http:www.szmeilai.com v1.0 .


8205A ML8205 ML8205A


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)