MBSK18S

MBSK12S THRU MBSK110S Schottky Bridge Rectifier Features 4.6¡À MBS 0.2 Io 1.0A VRRM 20V~100V Schottky chip High surge forward current capability Low VF 3.8¡À 0.2 2.5¡À 0.2 Applications General purpose 1 phase Bridge rectifier applications 0.6¡À 0.1 2.5¡À 0.25 1.0¡À 6.8¡À 0.15 0.2 0.3¡À 0.1 Dimensions in millimeters Limiting Values（Absolute Maximum Rating） Item Repetitive Peak Reverse Voltage Symbol Unit VRRM V Conditions MBSK 12S 14S 16S 18S 110S 20 40 60 80 100 Average Rectified Output Current IO A 60Hz sine wave, R-load, Ta=25℃ On alumina substrate On glass-epoxi substrate 1.0 0.8 40 Surge(Nonrepetitive)Forward Current Current Squared Time Storage Temperature Junction Temperature IFSM A 60HZ sine wave, 1 cycle, Tj=25℃ 2 It A2S ℃ ℃ 1ms≤t<8.3ms Tj=25℃，Rating of per diode 6.6 -55 ~+150 -55 ~+150 Tstg Tj Electrical Characteristics（Ta=25℃ Unless otherwise specified） Item Peak Forward Voltage Peak Reverse Current Symbol Unit VFM IRRM V mA Test Condition IFM=0.5A, Pulse measurement, Rating of per diode VRM=VRRM , Pulse measurement, Rating of per diode Between junction and ambient, On alumina substrate 0.55 Max 0.65 0.5 76 0.85 Thermal Resistance RθJ-A ℃/W Between junction and ambient, On glass-epoxi substrate Between junction and lead 134 RθJ-L 20 http://www.luguang.cn mail:[email protected] 1.2¡À 0.2 MBSK12S THRU MBSK110S Schottky Bridge Rectifier  Characteristics(Typical) FIG1:Io-Ta Curve 1.8 soldering land conductor layer substrate thickness...