MBSK12S THRU MBSK110S
Schottky Bridge Rectifier
Features
4.6¡À
MBS
0.2
Io
1.0A
VRRM 20V~100V Schottky chip High surg...
MBSK12S THRU MBSK110S
Schottky Bridge Rectifier
Features
4.6¡À
MBS
0.2
Io
1.0A
VRRM 20V~100V
Schottky chip High surge forward current capability Low VF
3.8¡À 0.2
2.5¡À 0.2
Applications
General purpose 1 phase Bridge rectifier applications
0.6¡À 0.1 2.5¡À 0.25 1.0¡À 6.8¡À 0.15 0.2 0.3¡À 0.1
Dimensions in millimeters
Limiting Values(Absolute Maximum Rating)
Item
Repetitive Peak Reverse Voltage
Symbol Unit
VRRM V
Conditions
MBSK 12S 14S 16S 18S 110S
20 40 60 80 100
Average Rectified Output Current
IO
A
60Hz sine wave, R-load, Ta=25℃
On alumina substrate On glass-epoxi substrate
1.0 0.8 40
Surge(Nonrepetitive)Forward Current Current Squared Time Storage Temperature Junction Temperature
IFSM
A
60HZ sine wave, 1 cycle, Tj=25℃
2 It
A2S ℃ ℃
1ms≤t<8.3ms Tj=25℃,Rating of per diode
6.6 -55 ~+150 -55 ~+150
Tstg Tj
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
Item
Peak Forward Voltage Peak Reverse Current
Symbol Unit
VFM IRRM V mA
Test Condition
IFM=0.5A, Pulse measurement, Rating of per diode VRM=VRRM , Pulse measurement, Rating of per diode Between junction and ambient, On alumina substrate 0.55
Max
0.65 0.5 76 0.85
Thermal Resistance
RθJ-A ℃/W Between junction and ambient, On glass-epoxi substrate Between junction and lead 134
RθJ-L
20
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mail:
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1.2¡À
0.2
MBSK12S THRU MBSK110S
Schottky Bridge Rectifier
Characteristics(Typical)
FIG1:Io-Ta Curve 1.8
soldering land conductor layer substrate thickness...