Document
MBSK12M THRU MBSK110M Schottky Bridge Rectifier
■ Features
● ● ●
■
Outline Dimensions and Mark
MBM
Io
1.0A
VRRM 20V~100V Schottky chip ● High surge forward current capability ● Low VF
.157(4.00) .142(3.60)
.287(7.3) .248(6.3)
.209(5.3) .189(4.8)
.193(4.90) .177(4.50) .053(1.53) .037(0.95)
.013(0.33) .0088(0.22)
■ Applications
●
General purpose 1 phase Bridge rectifier applications
.106(2.70) .090(2.30) .252(6.4) .236(6.0)
.033(0.84) .022(0.56)
.109(2.75) .089(2.25)
■() Limiting Values(Absolute Maximum Rating)
Item
Repetitive Peak Reverse Voltage Average Rectified Output Current () Surge(Nonrepetitive)Forward Current Current Squared Time Storage Temperature Junction Temperature
Dimensions in inches and (millimeters)
Symbol Unit
VRRM V
Conditions
12M
20
14M
40
MBSK 16M 18M
60 80
110M
100
IO
A
60Hz,,Ta=25℃ 60Hz sine wave, R-load, Ta=25℃ 60HZ,,Tj=25℃ 60HZ sine wave, 1 cycle, Tj=25℃ 1ms≤t<8.3ms Tj=25℃, 1ms≤t<8.3ms Tj=25℃,Rating of per diode
1.0
IFSM
A
40
2 It
A2S ℃ ℃
6.6 -55 ~+150 -55 ~+150
Tstg Tj
■ (Ta=25℃ ) Electrical Characteristics(Ta=25℃ Unless otherwise specified)
Item
Peak Forward Voltage Peak Reverse Current
Symbol Unit
VFM V
Test Condition
IFM=0.5A, , IFM=0.5A, Pulse measurement, Rating of per diode VRM=VRRM ,, VRM=VRRM , Pulse measurement, Rating of per diode ,- Between junction and ambient, On glassepoxi substrate Between junction and lead 0.55
Max
0.65 0.85
IRRM
mA
0.5
Thermal Resistance
RθJ-A ℃/W RθJ-L
134 20
Document Number 0005 Rev. 1.0, 22-Sep-11
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
MBSK12M THRU MBSK110M
■() Characteristics(Typical)
1 : Io-Ta FIG1:Io-Ta Curve
0.6
- on glass-epoxi substrate
Io(A)
2: FIG2:Surge Forward Current Capadility
70 60 50 40 30
non-repetitive Tj=25℃ sine wave
0.5
0
IFSM 8.3ms 8.3ms 1cycle
0.4
0.3
(2*7)mm 35um soldering land(2*7)mm Cu layer 35um
0.2
,, sine wave R-load free in air
20 10 0
0.1
0
0
40
80
120
160 Ta (℃ )
1
2
5
10
20
50 100 Number of Cycles
6 4 2 1
MBSK12M~MBSK14M
IR(mA)
3: FIG3: Forward Voltage
IF(A)
4: FIG4:Typical Reverse Characteristics
Tj=150℃ 10
100
0.5
MBSK18M~MBSK110M MBSK16M Ta=25℃
1 Tj=25℃ 0.1
0.1 0.05 0.02 0.01 0.4 0.5 0.6 0.7 0.8 0.9 VF(V)
0.001 0
0.01 MBSK12M~MBSK14M MBSK16M MBSK18M~MBSK110M 20 40 60 80 100 Voltage(%)
Document Number 0005 Rev. 1.0, 22-Sep-11
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
.