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MBSK18M Dataheets PDF



Part Number MBSK18M
Manufacturers YANGJIE
Logo YANGJIE
Description Schottky Bridge Rectifier
Datasheet MBSK18M DatasheetMBSK18M Datasheet (PDF)

MBSK12M THRU MBSK110M Schottky Bridge Rectifier ■ Features ● ● ● ■ Outline Dimensions and Mark MBM Io 1.0A VRRM 20V~100V Schottky chip ● High surge forward current capability ● Low VF .157(4.00) .142(3.60) .287(7.3) .248(6.3) .209(5.3) .189(4.8) .193(4.90) .177(4.50) .053(1.53) .037(0.95) .013(0.33) .0088(0.22) ■ Applications ● General purpose 1 phase Bridge rectifier applications .106(2.70) .090(2.30) .252(6.4) .236(6.0) .033(0.84) .022(0.56) .109(2.75) .089(2.25) ■() Limit.

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Document
MBSK12M THRU MBSK110M Schottky Bridge Rectifier ■ Features ● ● ● ■ Outline Dimensions and Mark MBM Io 1.0A VRRM 20V~100V Schottky chip ● High surge forward current capability ● Low VF .157(4.00) .142(3.60) .287(7.3) .248(6.3) .209(5.3) .189(4.8) .193(4.90) .177(4.50) .053(1.53) .037(0.95) .013(0.33) .0088(0.22) ■ Applications ● General purpose 1 phase Bridge rectifier applications .106(2.70) .090(2.30) .252(6.4) .236(6.0) .033(0.84) .022(0.56) .109(2.75) .089(2.25) ■() Limiting Values(Absolute Maximum Rating) Item Repetitive Peak Reverse Voltage Average Rectified Output Current () Surge(Nonrepetitive)Forward Current Current Squared Time Storage Temperature Junction Temperature Dimensions in inches and (millimeters) Symbol Unit VRRM V Conditions 12M 20 14M 40 MBSK 16M 18M 60 80 110M 100 IO A 60Hz,,Ta=25℃ 60Hz sine wave, R-load, Ta=25℃ 60HZ,,Tj=25℃ 60HZ sine wave, 1 cycle, Tj=25℃ 1ms≤t<8.3ms Tj=25℃, 1ms≤t<8.3ms Tj=25℃,Rating of per diode 1.0 IFSM A 40 2 It A2S ℃ ℃ 6.6 -55 ~+150 -55 ~+150 Tstg Tj ■ (Ta=25℃ ) Electrical Characteristics(Ta=25℃ Unless otherwise specified) Item Peak Forward Voltage Peak Reverse Current Symbol Unit VFM V Test Condition IFM=0.5A, , IFM=0.5A, Pulse measurement, Rating of per diode VRM=VRRM ,, VRM=VRRM , Pulse measurement, Rating of per diode ,- Between junction and ambient, On glassepoxi substrate Between junction and lead 0.55 Max 0.65 0.85 IRRM mA 0.5 Thermal Resistance RθJ-A ℃/W RθJ-L 134 20 Document Number 0005 Rev. 1.0, 22-Sep-11 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com MBSK12M THRU MBSK110M ■() Characteristics(Typical) 1 : Io-Ta FIG1:Io-Ta Curve 0.6 - on glass-epoxi substrate Io(A) 2: FIG2:Surge Forward Current Capadility 70 60 50 40 30 non-repetitive Tj=25℃ sine wave 0.5 0 IFSM 8.3ms 8.3ms 1cycle 0.4 0.3 (2*7)mm 35um soldering land(2*7)mm Cu layer 35um 0.2 ,, sine wave R-load free in air 20 10 0 0.1 0 0 40 80 120 160 Ta (℃ ) 1 2 5 10 20 50 100 Number of Cycles 6 4 2 1 MBSK12M~MBSK14M IR(mA) 3: FIG3: Forward Voltage IF(A) 4: FIG4:Typical Reverse Characteristics Tj=150℃ 10 100 0.5 MBSK18M~MBSK110M MBSK16M Ta=25℃ 1 Tj=25℃ 0.1 0.1 0.05 0.02 0.01 0.4 0.5 0.6 0.7 0.8 0.9 VF(V) 0.001 0 0.01 MBSK12M~MBSK14M MBSK16M MBSK18M~MBSK110M 20 40 60 80 100 Voltage(%) Document Number 0005 Rev. 1.0, 22-Sep-11 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com .


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