CEF08N2
Nov. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
250V , 6A , RDS(ON)=450m Ω @V...
CEF08N2
Nov. 2002
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
FEATURES
250V , 6A , RDS(ON)=450m Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole
D
G
G D S
S
TO-220F
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 250 Unit V V A A A W W/ C C
Ć 30
6 24 6 38 0.3 -50 to 150
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
1
RįJC RįJA
3.3 65
C/W C/W
CEF08N2
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS
b
Symbol
Condition
VGS = 0V, ID = 250µA VDS = 250V, VGS = 0V VGS =Ć30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 5.1A VGS = 10V, VDS = 10V VDS = 50V, ID = 5.1A
Min Typ Max Unit
250 25
Ć100
V µA nA V mΩ A 4.4 630 100 40 S
PF PF PF
ON CHARACTERISTICS a
Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 2 4 450 10
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
b
...