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MUN2215 Dataheets PDF



Part Number MUN2215
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Digital Transistors
Datasheet MUN2215 DatasheetMUN2215 Datasheet (PDF)

MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 8 kW NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− emitter resistor. The BRT eliminates these individual components.

  MUN2215   MUN2215


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MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 8 kW NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features PIN 1 BASE (INPUT) http://onsemi.com PIN CONNECTIONS PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) • • • • • MARKING DIAGRAMS SC−59 CASE 318D STYLE 1 Simplifies Circuit Design Reduces Board Space Reduces Component Count S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant XX MG G 1 XXX MG G 1 SOT−23 CASE 318 STYLE 6 MAXIMUM RATINGS (TA = 25°C) Rating Collector−Base Voltage Collector−Emitter Voltage Collector Current − Continuous Input Forward Voltage Input Reverse Voltage Symbol VCBO VCEO IC VIN(fwd) VIN(rev) Max 50 50 100 40 6 Unit Vdc Vdc mAdc Vdc Vdc XX MG G 1 XX M 1 XX M 1 XM 1 XXX M G SC−70/SOT−323 CASE 419 STYLE 3 SC−75 CASE 463 STYLE 1 SOT−723 CASE 631AA STYLE 1 SOT−1123 CASE 524AA STYLE 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2013 March, 2013 − Rev. 1 1 Publication Order Number: DTC114T/D MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3 Table 1. ORDERING INFORMATION Device MUN2215T1G MMUN2215LT1G, SMMUN2215LT1G MUN5215T1G, SMUN5215T1G DTC114TET1G DTC114TM3T5G NSBC114TF3T5G Part Marking 8E A8E 8E 8E 8E K (90°) Package SC−59 (Pb−Free) SOT−23 (Pb−Free) SC−70/SOT−323 (Pb−Free) SC−75 (Pb−Free) SOT−723 (Pb−Free) SOT−1123 (Pb−Free) Shipping† 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 8000 / Tape & Reel 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. * (xx°) = Degree rotation in the clockwise direction. 300 PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 −50 (1) (2) (3) (4) (5) (1) SC−75 and SC−70/SOT−323; Minimum Pad (2) SC−59; Minimum Pad (3) SOT−23; Minimum Pad (4) SOT−1123; 100 mm2, 1 oz. copper trace (5) SOT−723; Minimum Pad −25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 2 MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3 Table 2. THERMAL CHARACTERISTICS Characteristic THERMAL CHARACTERISTICS (SC−59) (MUN2215) Total Device Dissipation TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 1) (Note 2) Thermal Resistance, Junction to Ambient (Note 1) (Note 2) PD 230 338 1.8 2.7 540 370 264 287 −55 to +150 mW mW/°C °C/W °C/W °C Symbol Max Unit RqJA RqJL TJ, Tstg PD Thermal Resistance, (Note 1) Junction to Lead (Note 2) Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SOT−23) (MMUN2215L) Total Device Dissipation TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 1) (Note 2) Thermal Resistance, Junction to Ambient (Note 1) (Note 2) 246 400 2.0 3.2 508 311 174 208 −55 to +150 mW mW/°C °C/W °C/W °C RqJA RqJL TJ, Tstg PD Thermal Resistance, (Note 1) Junction to Lead (Note 2) Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5215) Total Device Dissipation TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 1) (Note 2) Thermal Resistance, Junction to Ambient (Note 1) (Note 2) 202 310 1.6 2.5 618 403 280 332 −55 to +150 mW mW/°C °C/W °C/W °C RqJA RqJL TJ, Tstg PD Thermal Resistance, (Note 1) Junction to Lead (Note 2) Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SC−75) (DTC114TE) Total Device Dissipation TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 1) (Note 2) Thermal Resistance, Junction to Ambient (Note 1) (Note 2) 200 300 1.6 2.4 600 400 −55 to +150 mW mW/°C °C/W °C RqJA TJ, Tstg PD Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SOT−723) (DTC114TM3) Total Device Dissipation TA = 25°C (Note 1) (Note 2) Derate above 25°C (Note 1) (Note 2) Thermal Resistance, Junction to Ambie.


RT9030 MUN2215 MMUN2215L


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