BLP8G20S-80P
Power LDMOS transistor
Rev. 2 — 13 October 2014 Product data sheet
1. Product profile
1.1 General descript...
BLP8G20S-80P
Power LDMOS
transistor
Rev. 2 — 13 October 2014 Product data sheet
1. Product profile
1.1 General description
80 W LDMOS
transistor for base station applications at frequencies from 1800 MHz to 2200 MHz.
Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common Doherty demo board. Test signal 2-carrier W-CDMA f (MHz) 1805 to 1880 1880 to 1920 2110 to 2170
[1]
IDq (mA) 300 300 300
VDS (V) 28 28 28
PL(AV) (W) 14.2 14.2 14.2
Gp (dB) 17 16.8 16
D (%) 47 46 43
ACPR (dBc) 30 [1] 30 [1] 30 [1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing = 5 MHz.
1.2 Features and benefits
Designed for broadband operation (1800 MHz to 2200 MHz) Excellent ruggedness High efficiency Excellent thermal stability Internally matched for ease of use High power gain Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3 Applications
RF power amplifiers for base station and multi-carrier applications in the 1800 MHz to 2200 MHz frequency range
NXP Semiconductors
BLP8G20S-80P
Power LDMOS
transistor
2. Pinning information
Table 2. Pin 1 2 3 4 5 Pinning Description gate 2 gate 1 drain 1 drain 2 source
[1]
Simplified outline
Graphic symbol
SLQLQGH[
DDD
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering information Package Name BLP8G20S-80P Description Version SOT...