SVD10N65FG

SVD10N65T/F(G)_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD10N65T/F(G) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ 10A,650V,RDS(on)(typ.)=0.84Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD10N65T SVD10N65F SVD10N65FG Package TO-220-3L TO-220F-3L TO-220F-3L Marking SVD10N65T SVD10N65F SVD10N65FG Material Pb free Pb free Halogen free Packing Tube Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.3 2011.03.14 Page 1 of 8 SVD10N65T/F(G)_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS TJ Tstg 156 1.25 854 150 -55～+150 Rating SVD10N65T 650 ±30 10 40 50 0.4 SVD10N65F(G) Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS...