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SVD8N80T/F_Datasheet
8A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD8N80T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin
TM
structure DMOS technology. The improved planar stripe
cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 8A,800V,RDS(on)(typ)=1.3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING SPECIFICATIONS
Part No. SVD8N80T SVD8N80F Package TO-220-3L TO-220F-3L Marking SVD8N80T SVD8N80F Material Pb free Pb free Packing Tube Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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SVD8N80T/F_Datasheet
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS TJ Tstg 180 1.44 402 -55~+150 -55~+150 Rating SVD8N80T 800 ±30 8.0 35 59 0.48 SVD8N80F Unit V V A A W W/°C mJ °C °C
THERMAL CHARACTERISTICS
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Rating SVD8N80T 0.7 62.5 SVD8N80F 2.0 120 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Parameter Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd (Note 2,3) VDS=640V,ID=8.0A, VGS=10V (Note 2,3) VDD=400V,ID=8.0A, RG=25Ω Test conditions VGS=0V, ID=250µA VDS=800V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA VGS=10V, ID=4A Min. 800 --2.5 -----------Typ. ----1.3 1354 112 11 39.6 76 82.2 43.8 32.2 7.66 15.27 Max. -10 ±100 4.5 1.55 2020 171 18 87 240 135 145 45 --nC ns pF Unit V µA nA V Ω
VDS=25V,VGS=0V, f=1.0MHz
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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SVD8N80T/F_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Notes: 1. L=30mH, IAS=4.74A, VDD=160V, RG=25Ω, starting TJ=25°C; Symbol IS ISM VSD Trr Qrr Test conditions Integral Junction MOSFET IS=8.0A,VGS=0V IS=8.0A,VGS=0V, dIF/dt=100A/µS Reverse Diode in P-N the Min. -----Typ. ---680 8.1 Max. 8.0 A 32 1.4 --V ns µC Unit
2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature.
TYPICAL CHARACTERISTICS
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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SVD8N80T/F_Datasheet
TYPICAL CHARACTERISTICS(continue)
Figure 5. Capacitance Characteristics 2500 Gate Source Voltage – VGS(V) 2000 Capacitance (pF) 1500 1000 500 0 0.1
Ciss Coss Crss Notes: 1. VGS=0V 2. f=1MHz Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd
Figure 6. Gate Charge Characteristics 12 10 8 6 4 2
Notes:ID=8.0A VDS=640V VDS=400V VDS=160V
1
10
100
0
0
5
10
15
20
25
30
35
Drain Source Voltage – VDS(V) Figure 7. Breakdown Voltage Variation vs. Temperature Drain Source Breakdown Voltage – RDS(on) (Normalized)(Ω)
Total Gate Charge – Qg(nC) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100
Notes: 1. VGS=10V 2. ID=4A
1.2 Drain Source Breakdown Voltage BVDSS(Normalized)(V)
1.1
1.0
0.9
Notes: 1. VGS=0V 2. ID=250μA
0.8 -100
-50
0
50
100
150
200
-50
0
50
100
150
200
Junction Temperature – TJ(°C)
Junction Temperature – TJ(°C)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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SVD8N80T/F_Datasheet
TYPICAL TEST CIRCUIT
Gate Charge Test Circuit & Waveform
50KΩ 12V 200nF 300nF
Same Type as DUT
VGS VDS
10V
Qg
Qgs
Qgd
VGS
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveform
VDS VGS RG
RL VDD
DUT
VDS
90%
10V
VGS
10%
td(on)
tr ton
td(off)
tf toff
Unclamped Inductive Switching Test Circuit & Waveform
L
EAS =
VDS ID RG
DUT 10V tp
BVDSS 1 2 2 LIAS BVDSS - VDD
BVDSS IAS
VDD VDD
ID(t) VDS(t)
tp Time
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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SVD8N80T/F_Datasheet
PACKAGE OUTLINE
TO-220-3L
UNIT: mm
TO-220F-3L
UNIT: mm
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.20 Page 6 of 8
SVD8N80T/F_Datasheet
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