SVD2N70F

SVD2N70M/F/T_Datasheet 2A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD2N70M/F/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ ∗ ∗ ∗ ∗ 2A,700V, RDS(on) (typ)=5.5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD2N70M SVD2N70F SVD2N70T Package TO-251-3L TO-220F-3L TO-220-3L Marking SVD2N70M SVD2N70F SVD2N70T Material Pb free Pb free Pb free Packing Tube Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.1 2011.03.03 Page 1 of 9 SVD2N70M/F/T_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg 34 0.27 Rating SVD2N70M SVD2N70F 700 ±30 2.0 8.0 23 0.18 89 -55～+150 -55～+150 44 0.35 SVD2N70T Unit V V A A W W/°C mJ °C °C THERMAL CHARACT...