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SVF5N60DTR Dataheets PDF



Part Number SVF5N60DTR
Manufacturers Silan Microelectronics
Logo Silan Microelectronics
Description 600V N-CHANNEL MOSFET
Datasheet SVF5N60DTR DatasheetSVF5N60DTR Datasheet (PDF)

SVF5N60T/F/D/MJ_Datasheet 5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widel.

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SVF5N60T/F/D/MJ_Datasheet 5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 5A,600V,RDS(on)(typ)=1.88Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF5N60T SVF5N60F SVF5N60D SVF5N60DTR SVF5N60MJ Package TO-220-3L TO-220F-3L TO-252-2L TO-252-2L TO-251J-3L Marking SVF5N60T SVF5N60F SVF5N60D SVF5N60D SVF5N60MJ Material Pb free Pb free Pb free Pb free Pb free Packing Tube Tube Tube Tape & Reel Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.2 2011.09.13 Page 1 of 10 SVF5N60T/F/D/MJ_Datasheet ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range TC=25°C TC=100°C Symbol VDS VGS ID IDM PD EAS TJ Tstg 120 0.96 242 -55~+150 -55~+150 Ratings SVF5N60T/D/MJ 600 ±30 5 3.1 20 40 0.32 SVF5N60F Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Ratings Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA SVF5N 60T 1.04 62.5 SVF5N 60D 1.04 110 SVF5N 60MJ 1.00 110 SVF5N 60F 3.13 120 °C/W °C/W Unit ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDD=300V,ID=5.0A, RG=25Ω (Note 2,3) VDS=25V,VGS=0V, f=1.0MHZ Test conditions VGS=0V, ID=250µA VDS=600V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA VGS=10V, ID=2.5A Min. 600 --2.0 -----------Typ. ----1.88 479.8 62.7 2.1 14.93 28.40 28.27 21.73 9.27 2.79 3.37 Max. -1.0 ±100 4.0 2.15 ----------nC ns pF Unit V µA nA V Ω VDS=480V,ID=5.0A, VGS=10V (Note 2,3) HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.2 2011.09.13 Page 2 of 10 SVF5N60T/F/D/MJ_Datasheet SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Notes: 1. 2. 3. L=30 mH, IAS=3.78A, VDD=70V, RG=25Ω,starting TJ=25°C; Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; Essentially independent of operating temperature. Symbol IS ISM VSD Trr Qrr Test conditions Integral Reverse P-N Junction Diode in the MOSFET IS=5.0A,VGS=0V IS=5.0A,VGS=0V, dIF/dt=100A/µs Min. -----Typ. ---190 0.53 Max. 5 20 1.4 --A V ns µC Unit HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.2 2011.09.13 Page 3 of 10 SVF5N60T/F/D/MJ_Datasheet TYPICAL CHARACTERISTICS HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.2 2011.09.13 Page 4 of 10 SVF5N60T/F/D/MJ_Datasheet TYPICAL CHARACTERISTICS(continued) Figure 7. Breakdown Voltage Variation vs. Temperature Drain-Source On-Resistance (Normalized) – RDS(ON)(Ω) Figure 8. On-resistance Variation vs. Temperature 1.2 Drain-Source Breakdown Voltage(Normalized) – BVDSS(V) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 1.1 1.0 0.9 Notes: 1. VGS=0V 2. ID=250µA Notes: 1. VGS=10V 2. ID=2.5A 0.8 -100 -50 0 50 100 150 200 -50 0 50 100 150 200 Junction Temperature – TJ(°C) Figure 9-1. Max. Safe Operating Area(SVF5N60T/D/MJ) Operation in This Area is Limited by RDS(ON) 100µs 1ms 10ms Junction Temperature – TJ(°C) Figure 9-2. Max. Safe Operating Area(SVF5N60F) Operation in This Area is Limited by RDS(ON) 100µs 1ms 10ms 102 102 Drain Current - ID(A) 10 0 Drain Current - ID(A) 101 101 DC 100 DC 10-1 Notes: 1.TC=25°C 2.Tj=150°C 3.Single Pulse 10-1 Notes: 1.TC=25°C 2.Tj=150°C 3.Single Pulse 10-2 100 101 102 103 10-2 100 101 102 103 Drain Source Voltage - VDS(V) Figure 10. Maximum Drain Current vs. Case Temperature Drain Source Voltage - VDS(V) 5 4 Drain Current - ID(A) 3 2 1 0 25 50 75 100 125 150 Case Temperature – TC(°C) HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.2 2011.09.13 Page 5 of 10 SVF5N60T/F/D/MJ_Datasheet TYPICAL TEST CIRCUIT Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same T.


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