N-Channel MOSFET
STW23NM60ND
Datasheet
N-channel 600 V, 0.150 Ω typ., 19.5 A, FDmesh II Power MOSFET in a TO-247 package
Features
Order...
Description
STW23NM60ND
Datasheet
N-channel 600 V, 0.150 Ω typ., 19.5 A, FDmesh II Power MOSFET in a TO-247 package
Features
Order code
VDS @ TJ max
RDS(on) max.
ID
t(s) 3 c 2
1
du TO-247 lete Pro D(2, TAB)
STW23NM60ND
650 V
Fast-recovery body diode Low gate charge and input capacitance Low on-resistance RDS(on) 100% avalanche tested High dv/dt ruggedness
Applications
Switching applications
0.180 Ω
19.5 A
bso G(1) t(s) - O S(3)
AM01475v1_noZen
Description
This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
Obsolete Produc Product status link
STW23NM60ND
Product summary
Order code
STW23NM60ND
Marking
23NM60ND
Package
TO-247
Packing
Tube
DS13218 - Rev 1 - January 2020 For further information contact your local STMicroelectronics sales office.
www.st.com
STW23NM60ND
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
VDS
Drain-source voltage
600
VGS
Gate-source voltage
±25
ID
Drain current (continuous) at TC = 25 °C
) ID
Drain current (continuous) at TC = 100 °C
t(s IDM(1)
Drain current (pulsed)
uc PTOT
Total power dissipation at TC = 25 °C
rod IAS
Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max)
P EAS
Single pulse avala...
Similar Datasheet