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SVF1N60MJ

Silan Microelectronics
Part Number SVF1N60MJ
Manufacturer Silan Microelectronics
Description 600V N-CHANNEL MOSFET
Published Oct 19, 2014
Detailed Description SVF1N60M/MJ/N/B/D_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFM/MJ/N/B/D is an N-channel enhancement mode...
Datasheet PDF File SVF1N60MJ PDF File

SVF1N60MJ
SVF1N60MJ


Overview
SVF1N60M/MJ/N/B/D_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFM/MJ/N/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES ∗ ∗ ∗ ∗ ∗ 1A,600V,RDS(on)(typ.
)=8.
2Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capabili...



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