SVD1N60M/T/B/D_Datasheet
1A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD1N60M/T/B/D is an N-channel enhancement mode p...
SVD1N60M/T/B/D_Datasheet
1A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD1N60M/T/B/D is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary S-Rin
TM
structure VDMOS technology. The improved
planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
∗ ∗ ∗ ∗ ∗ 1A,600V,RDS(on)(typ.)=8.6Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVD1N60M SVD1N60M SVD1N60T SVD1N60B SVD1N60BTR SVD1N60D SVD1N60DTR Package TO-251-3L TO-251D-3L TO-220-3L TO-92-3L TO-92-3L TO-252-2L TO-252-2L Marking SVD1N60M SVD1N60M SVD1N60T 1N60B 1N60B SVD1N60D SVD1N60D Material Pb free Pb free Pb free Pb free Pb free Pb free Pb free Packing Tube Tube Tube Bulk AMMO Tube Tape & Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.4
2011.06.28 Page 1 of 10
SVD1N60M/T/B/D_Datasheet
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symb...