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STB458D Dataheets PDF



Part Number STB458D
Manufacturers SamHop
Logo SamHop
Description Dual Enhancement Mode Field Effect Transistor
Datasheet STB458D DatasheetSTB458D Datasheet (PDF)

Green Product STB458D Ver 1.0 S a mHop Microelectronics C orp. Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) V DSS 40V PRODUCT SUMMARY (P-Channel) V DSS -40V ID 30A R DS(ON) (m Ω) Max 10.5 @ VGS=10V ID -24A R DS(ON) (m Ω) Max 17 @ VGS=-10V 24 @ VGS=-4.5V 14 @ VGS=4.5V D1 D1/D2 D2 G1 S1 G1 D1/D2 S2 G2 G2 STB SERIES TO-263 5L S1 N-ch S2 P -ch ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol Parameter N-Channel P-.

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Green Product STB458D Ver 1.0 S a mHop Microelectronics C orp. Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) V DSS 40V PRODUCT SUMMARY (P-Channel) V DSS -40V ID 30A R DS(ON) (m Ω) Max 10.5 @ VGS=10V ID -24A R DS(ON) (m Ω) Max 17 @ VGS=-10V 24 @ VGS=-4.5V 14 @ VGS=4.5V D1 D1/D2 D2 G1 S1 G1 D1/D2 S2 G2 G2 STB SERIES TO-263 5L S1 N-ch S2 P -ch ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol Parameter N-Channel P-Channel VDS Drain-Source Voltage -40 40 VGS Gate-Source Voltage ±20 ±20 TC=25°C 30 -24 a ID Drain Current-Continuous TC=70°C 23.7 -19 b IDM 68 -60 -Pulsed d 170 210 EAS Sigle Pulse Avalanche Energy PD TJ, TSTG Maximum Power Dissipation a Units V V A A A mJ W W °C TC=25°C TC=70°C 15.6 10 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 8 80 °C/W °C/W Apr,23,2010 1 www.samhop.com.tw STB458D Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min 40 Typ Max Units V A nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance VGS= ±20V , VDS=0V 1 ±100 3 10.5 14 VDS=VGS , ID=250uA VGS=10V , ID=15A VGS=4.5V , ID=13A VDS=10V , ID=15A 1 1.9 8.5 10.5 65 1500 250 170 25 30 65 40 25 12.5 2.6 7 0.8 V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On DelayTime tr Rise Time tD(OFF) Turn-Off DelayTime tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=20V,VGS=0V f=1.0MHz VDD=20V ID=1A VGS=10V RGEN=6 ohm VDS=20V,ID=15A,VGS=10V VDS=20V,ID=15A,VGS=4.5V VDS=20V,ID=15A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD VGS=0V,IS=6A Diode Forward Voltage 1.3 V Apr,23,2010 2 www.samhop.com.tw STB458D Ver 1.0 P-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-32V , VGS=0V Min -40 Typ Max Units V uA nA V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance VGS= ±20V , VDS=0V -1 ±100 -1 -1.6 13.5 18 29 2480 350 260 39 70 320 120 61 31 5 17 -0.8 -1.2 -3 17 24 VDS=VGS , ID=-250uA VGS=-10V , ID=-12A VGS=-4.5V , ID=-10A VDS=-10V , ID=-12A Forward Transconductance DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS c SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge VDS=-20V,VGS=0V f=1.0MHz VDD=-20V ID=-1A VGS=-10V RGEN=3 ohm VDS=-20V,ID=-12A,VGS=-10V VDS=-20V,ID=-12A,VGS=-4.5V VDS=-20V,ID=-12A, VGS=-10V VGS=0V,IS=-5A Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V,VGS=10V.(See Figure13) Apr,23,2010 3 www.samhop.com.tw STB458D Ver 1.0 N-Channel 100 35 VG S = 10V VG S = 4V ID, Drain Current(A) ID, Drain Current(A) 80 28 T j=125 C 21 -55 C 25 C 7 0 VG S = 4.5V 60 VG S = 3.5V 40 14 20 VG S = 3V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.7 1.4 2.1 2.8 3.5 4.2 VDS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 24 20 2.0 1.8 1.6 1.4 1.2 1.0 0 Figure 2. Transfer Characteristics R DS(on)(m Ω) 16 V G S =4.5V 12 8 4 1 V G S =10V R DS(on), On-Resistance Normalized V G S =10V I D =15A V G S =4.5V I D =13A 1 20 40 60 80 100 0 25 50 75 100 125 150 T j( C ) ID, Drain Current (A) Tj, Junction Temperature ( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Vth, Normalized Gate-Source Threshold Voltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 V DS =V G S I D =250uA 75 100 125 150 Tj, Junction Temperature ( C ) Tj, Junction Temperature ( C ) Figure 5. Gate Threshold Variation with Temperature 4 Figure 6. Breakdown Voltage Variation with Temperature Apr,23,2010 www.samhop.com.tw STB458D Ver 1.0 30 25 60 Is, Source-drain current.


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