Document
Green Product
STB458D
Ver 1.0
S a mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
PRODUCT SUMMARY (N-Channel)
V DSS
40V
PRODUCT SUMMARY (P-Channel)
V DSS
-40V
ID
30A
R DS(ON) (m Ω) Max
10.5 @ VGS=10V
ID
-24A
R DS(ON) (m Ω) Max
17 @ VGS=-10V 24 @ VGS=-4.5V
14
@ VGS=4.5V
D1
D1/D2
D2
G1
S1 G1 D1/D2 S2 G2
G2
STB SERIES TO-263 5L
S1
N-ch
S2
P -ch
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol Parameter N-Channel P-Channel VDS Drain-Source Voltage -40 40 VGS Gate-Source Voltage ±20 ±20 TC=25°C 30 -24 a ID Drain Current-Continuous TC=70°C 23.7 -19 b IDM 68 -60 -Pulsed d 170 210 EAS Sigle Pulse Avalanche Energy PD TJ, TSTG Maximum Power Dissipation
a
Units V V A A A mJ W W °C
TC=25°C TC=70°C
15.6 10 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient
8 80
°C/W °C/W
Apr,23,2010
1
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STB458D
Ver 1.0
N-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
Symbol Parameter Conditions
VGS=0V , ID=250uA VDS=32V , VGS=0V
Min 40
Typ
Max
Units V A nA
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
VGS= ±20V , VDS=0V
1 ±100 3 10.5 14
VDS=VGS , ID=250uA VGS=10V , ID=15A VGS=4.5V , ID=13A VDS=10V , ID=15A
1
1.9 8.5 10.5 65 1500 250 170 25 30 65 40 25 12.5 2.6 7 0.8
V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC
DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On DelayTime tr Rise Time tD(OFF) Turn-Off DelayTime tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge
c
VDS=20V,VGS=0V f=1.0MHz
VDD=20V ID=1A VGS=10V RGEN=6 ohm VDS=20V,ID=15A,VGS=10V VDS=20V,ID=15A,VGS=4.5V VDS=20V,ID=15A, VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD VGS=0V,IS=6A Diode Forward Voltage
1.3
V
Apr,23,2010
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STB458D
Ver 1.0
P-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
4 Symbol
Parameter
Conditions
VGS=0V , ID=-250uA VDS=-32V , VGS=0V
Min -40
Typ
Max
Units V uA nA V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance
VGS= ±20V , VDS=0V
-1 ±100 -1 -1.6 13.5 18 29 2480 350 260 39 70 320 120 61 31 5 17 -0.8 -1.2 -3 17 24
VDS=VGS , ID=-250uA VGS=-10V , ID=-12A VGS=-4.5V , ID=-10A VDS=-10V , ID=-12A
Forward Transconductance DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS c SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge
VDS=-20V,VGS=0V f=1.0MHz
VDD=-20V ID=-1A VGS=-10V RGEN=3 ohm VDS=-20V,ID=-12A,VGS=-10V VDS=-20V,ID=-12A,VGS=-4.5V VDS=-20V,ID=-12A, VGS=-10V VGS=0V,IS=-5A
Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage
V
Notes
_ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V,VGS=10V.(See Figure13)
Apr,23,2010
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STB458D
Ver 1.0
N-Channel
100 35
VG S = 10V
VG S = 4V
ID, Drain Current(A)
ID, Drain Current(A)
80
28 T j=125 C 21 -55 C 25 C 7 0
VG S = 4.5V
60
VG S = 3.5V
40
14
20
VG S = 3V
0 0 0.5 1.0 1.5 2.0 2.5 3.0
0
0.7
1.4
2.1
2.8
3.5
4.2
VDS, Drain-to-Source Voltage(V)
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
24 20 2.0 1.8 1.6 1.4 1.2 1.0 0
Figure 2. Transfer Characteristics
R DS(on)(m Ω)
16
V G S =4.5V
12 8 4 1
V G S =10V
R DS(on), On-Resistance Normalized
V G S =10V I D =15A
V G S =4.5V I D =13A
1
20
40
60
80
100
0
25
50
75
100
125
150
T j( C )
ID, Drain Current (A)
Tj, Junction Temperature ( C )
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
Figure 4. On-Resistance Variation with Drain Current and Temperature
BVDSS, Normalized Drain-Source Breakdown Voltage
1.6
1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150
Vth, Normalized Gate-Source Threshold Voltage
1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50
V DS =V G S I D =250uA
75 100 125 150
Tj, Junction Temperature ( C )
Tj, Junction Temperature ( C )
Figure 5. Gate Threshold Variation with Temperature 4
Figure 6. Breakdown Voltage Variation with Temperature
Apr,23,2010
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STB458D
Ver 1.0
30 25
60
Is, Source-drain current.