STD307S

Green Product STU/D307S Ver 1.0 S a mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -30V ID -53A R DS(ON) (m Ω) Max 9.5 14 @ VGS=-10V @ VGS=-4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit -30 ±20 -53 -42 -160 42 27 -55 to 150 Units V V A A A W W °C TC=25°C TC=70°C TC=25°C TC=70°C Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a 3 50 °C/W °C/W Details are subject to change without notice. Jan,29,2010 1 www.samhop.com.tw Downloaded from Elcodis.com electronic components distributor STU/D307S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol BVDSS IDSS IGSS Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Conditions VGS=0V , ID=-250uA VDS=-24V , VGS=0V Min -30 Typ Max Units V uA uA OFF CHARACTERISTICS 1 ±10 VGS= ±20V , VDS=0V ON CHARACTERISTICS VGS(th) RDS(ON) gFS Gate Threshold Voltage Drain-Source On-State Resistance Forward Tra...