Green Product
STS6601
Ver 1.0
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
PRO...
Green Product
STS6601
Ver 1.0
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
-60V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-26 package.
ID
-3.2A
R DS(ON) (m Ω) Max
110 @ VGS=-10V 160 @ VGS=-4.5V
S OT26 Top View
D
D D G
1 2 3
6 5 4
D D S
G
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
Limit -60 ±20 TA=25°C TA=70°C TA=25°C TA=70°C -3.2 -2.6 -12
a
Units V V A A A W W °C
Maximum Power Dissipation
2 1.28 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
62.5
°C/W
Details are subject to change without notice.
Sep,30,2008
1
www.samhop.com.tw
STS6601
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions
VGS=0V , ID=-250uA VDS=-48V , VGS=0V
Min -60
Typ
Max
Units V
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VGS= ±20V , VDS=0V
-1 ±100
uA nA
VDS=VGS , ID=-250uA VGS=-10V , ID=-3.2A VGS=-4.5V , ID=-2.6A VDS=-10V , ID=-3.2A
-1.0
-2.0 88 120 6.3 745 69 42 12 12 65.8 22 13.5 6.5 1.5 3.2
-3 110...