STS4501

Green Product S T S 4501 Oc t. 12,2007 S amHop Microelectronics C orp. P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m Ω ) Max F E AT UR E S S uper high dense cell design for low R DS (ON ). 65 @ V G S = -10V -40V -3.5A 85 @ V G S = -4.5V R ugged and reliable. S OT-23 P ackage. D S OT-23 D S G G S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit - 40 20 -3.5 - 14 -1.25 1.25 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 100 C /W 1 S T S 4501 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S a Condition V GS = 0V, ID = -250uA V DS = -32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS =-10V, ID = -3.5A V GS =-4.5V, ID= -2A V DS = -5V, V GS = -10V V DS = -10V, ID =-3.5A Min Typ C Max Unit -40 -1 V uA 100 nA -1 -1.6 54 70 -20 8.7 660 -3 65 85 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS Gate Threshold Voltage V GS (th) R DS (ON) ID(ON) gFS b Drain-S ource On-S tate R esistance On-S tate Drain Curre...