Green Product
STM6967
Ver 1.0
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
PRO...
Green Product
STM6967
Ver 1.0
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
-60V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
ID
-4A
R DS(ON) (m Ω) Max
86 @ VGS=-10V 125 @ VGS=-4.5V
D D
5 6 7 8
4 3 2 1
G S S S
S O-8 1
D D
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
TA=25°C TA=70°C
Limit -60 ±20 -4 -3.2 -22 49
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
a
TA=25°C TA=70°C
2.5 1.6 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
50
°C/W
Details are subject to change without notice.
Apr,28,2010
1
www.samhop.com.tw
STM6967
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions
VGS=0V , ID=-250uA VDS=-48V , VGS=0V
Min -60
Typ
Max
Units V
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VGS= ±20V , VDS=0V
-1 ±10
uA uA
VDS=VGS , ID=-250uA VGS=-10V , ID=-4A VGS=-4.5V , ID=-3.3A VDS=-5V , ID=-4A
-2.0
-2.4 69 93 15 1110 79 56
-4.0 86...