STM4637

STM4637 S a mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -30V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID -7.7A R DS(ON) (m Ω) Max 30 @ VGS=-10V 48 @ VGS=-4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a TA=25°C Limit -30 ±20 -7.7 -35 37 2.5 -55 to 150 Units V V A A mJ W °C Single Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 50 °C/W Details are subject to change without notice. May,13,2008 1 www.samhop.com.tw STM4637 Ver 1.1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-24V , VGS=0V Min -30 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±20V , VDS=0V -1 ±10 uA uA VDS=VGS , ID=-250uA VGS=-10V , ID=-7.7A VGS=-4.5V , ID=-6.2A VDS=-15V , ID=-7.7A -1 -1.8 24 36 12.5 -3 30 48 V m ohm m ohm S pF pF pF ns ns ...