STM4637
S a mHop Microelectronics C orp.
Ver 1.1
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V ...
STM4637
S a mHop Microelectronics C orp.
Ver 1.1
P-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
-30V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
ID
-7.7A
R DS(ON) (m Ω) Max
30 @ VGS=-10V 48 @ VGS=-4.5V
D D
5 6 7 8
4 3 2 1
G S S S
S O-8 1
D D
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
TA=25°C
Limit -30 ±20 -7.7 -35 37 2.5 -55 to 150
Units V V A A mJ W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
a
TA=25°C
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
50
°C/W
Details are subject to change without notice.
May,13,2008
1
www.samhop.com.tw
STM4637
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions
VGS=0V , ID=-250uA VDS=-24V , VGS=0V
Min -30
Typ
Max
Units V
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VGS= ±20V , VDS=0V
-1 ±10
uA uA
VDS=VGS , ID=-250uA VGS=-10V , ID=-7.7A VGS=-4.5V , ID=-6.2A VDS=-15V , ID=-7.7A
-1
-1.8 24 36 12.5
-3 30 48
V m ohm m ohm S pF pF pF ns ns ...