SP2112

Green Product SP2112 Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 1.2A R DS(ON) (m Ω) Max 390 @ VGS=10V 430 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D1 D1 D2 D2 DFN 3x3 PIN1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed c d a c TA=25°C TA=70°C Limit 100 ±20 1.2 1.0 8 0.64 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C TA=70°C 1.47 0.94 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 85 °C/W Details are subject to change without notice. May,07,2014 1 www.samhop.com.tw SP2112 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=80V , VGS=0V 100 1 ±100 V uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b VDS=VGS , ID=250uA VGS=10V , ID=0.6A VGS=4.5V , ID=0.55A VDS=5V , ID=0.6A 1 1.7 320 350 2 3 390 430 V m ohm m ohm S pF...