STE339S

Green Product STE339S Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 30V ID 12A R DS(ON) (m Ω) Max 10.5 @ VGS=10V 15 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. 5 6 7 8 PIN 1 1 2 3 4 Power Pak 5 x 6 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a Limit 30 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 12 9.6 42 3.1 2 -55 to 150 Units V V A A A W W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 40 °C/W Details are subject to change without notice. Dec,04,2012 1 www.samhop.com.tw STE339S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=24V , VGS=0V 30 1 ±100 V uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b VDS=VGS , ID=250uA VGS=10V , ID=6A VGS=4.5V , ID=4.6A VDS=10V , ID=6A 1 1.8 9 12.5 29 3 10.5 15 V m ohm m ohm S pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance CISS...