Document
Green Product
SP8651
Ver 3.7
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
14.0 @ VGS=4.5V 15.0 @ VGS=4.0V 24V 10A 16.0 @ VGS=3.7V 17.5 @ VGS=3.1V 21.0 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D2 D2 D1
5 6 7 8
4 3 2 1
G2 S2 G1 S1
S mini 8
P IN 1
D1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
d c ad
Limit 24 ±12 TA=25°C TA=70°C 10 8 60 56 TA=25°C TA=70°C 1.32 0.84 -55 to 150
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
95
°C/W
Details are subject to change without notice.
May,29,2014
1
www.samhop.com.tw
SP8651
Ver 3.7
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th)
VGS=0V , ID=250uA VDS=20V , VGS=0V
24 1 ±1
V uA uA
VGS= ±8V , VDS=0V
RDS(ON)
Drain-Source On-State Resistance
VDS=VGS , ID=1mA VGS=4.5V , ID=5A VGS=4.0V , ID=5A VGS=3.7V , ID=5A VGS=3.1V , ID=5A VGS=2.5V , ID=5A VDS=10V , ID=5A
0.5 8.0 8.5 9.0 9.5 11.0
1.1 11.5 12.0 12.5 13.5 16.0 28
V 14.0 m ohm 15.0 m ohm 16.0 m ohm 17.5 m ohm 21.0 m ohm S
1.5
gFS
Forward Transconductance
b
SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD=20V ID=5A VGS=4.5V RGEN= 6 ohm VDS=20V,ID=10A, VGS=4.5V
122 463 1200 920 12.5 1.7 6.5
ns ns ns ns nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=10A
0.85
1.2
V
Notes
a.Surface Mounted on FR4 Board of 1 inch2 , 1oz. b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=0.5mH,VDD = 10V. d.Drain current limited by maximum junction temperature.
May,29,2014
2
www.samhop.com.tw
SP8651
Ver 3.7
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
120
3
dT - Percentage of rated Power - %
PT - Total Power Dissipation - W
100 80 60 40 20 0 0 25 50 75 100 125 150 175
2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 150 175
Mounted on FR-4 board of 1 inch2 , 1oz
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
ID - Drain Current - A
R
(ON DS
mit ) Li
10us 100us 1ms
10
1
1s 10ms
0.1
VGS=4.5V Single Pulse TA=25 C
1 10
DC
0.01 0.1
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transie.