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SP8651 Dataheets PDF



Part Number SP8651
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet SP8651 DatasheetSP8651 Datasheet (PDF)

Green Product SP8651 Ver 3.7 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 14.0 @ VGS=4.5V 15.0 @ VGS=4.0V 24V 10A 16.0 @ VGS=3.7V 17.5 @ VGS=3.1V 21.0 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D2 D2 D1 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S mini 8 P IN 1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol .

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Green Product SP8651 Ver 3.7 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 14.0 @ VGS=4.5V 15.0 @ VGS=4.0V 24V 10A 16.0 @ VGS=3.7V 17.5 @ VGS=3.1V 21.0 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D2 D2 D1 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S mini 8 P IN 1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed d c ad Limit 24 ±12 TA=25°C TA=70°C 10 8 60 56 TA=25°C TA=70°C 1.32 0.84 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 95 °C/W Details are subject to change without notice. May,29,2014 1 www.samhop.com.tw SP8651 Ver 3.7 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS=0V , ID=250uA VDS=20V , VGS=0V 24 1 ±1 V uA uA VGS= ±8V , VDS=0V RDS(ON) Drain-Source On-State Resistance VDS=VGS , ID=1mA VGS=4.5V , ID=5A VGS=4.0V , ID=5A VGS=3.7V , ID=5A VGS=3.1V , ID=5A VGS=2.5V , ID=5A VDS=10V , ID=5A 0.5 8.0 8.5 9.0 9.5 11.0 1.1 11.5 12.0 12.5 13.5 16.0 28 V 14.0 m ohm 15.0 m ohm 16.0 m ohm 17.5 m ohm 21.0 m ohm S 1.5 gFS Forward Transconductance b SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=20V ID=5A VGS=4.5V RGEN= 6 ohm VDS=20V,ID=10A, VGS=4.5V 122 463 1200 920 12.5 1.7 6.5 ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=10A 0.85 1.2 V Notes a.Surface Mounted on FR4 Board of 1 inch2 , 1oz. b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=0.5mH,VDD = 10V. d.Drain current limited by maximum junction temperature. May,29,2014 2 www.samhop.com.tw SP8651 Ver 3.7 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 120 3 dT - Percentage of rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 175 2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 150 175 Mounted on FR-4 board of 1 inch2 , 1oz TA - Ambient Temperature - °C TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ID - Drain Current - A R (ON DS mit ) Li 10us 100us 1ms 10 1 1s 10ms 0.1 VGS=4.5V Single Pulse TA=25 C 1 10 DC 0.01 0.1 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transie.


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