SP8009E

Green Product SP8009E Ver 1.5 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 33V ID 24A R DS(ON) (m Ω) Typ 5.0 @ VGS=10V 6.5 @ VGS=6V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a Limit 33 ±20 Units V V A A W °C TA=25°C TA=25°C 24 72 1.67 -55 to 150 Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 75 °C/W Details are subject to change without notice. Oct,22,2013 1 www.samhop.com.tw SP8009E Ver 1.5 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min 33 10 10 ±10 Typ Max Units OFF CHARACTERISTICS BVDSS BVDSX IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=10mA VGS=-20V , ID=10mA VDS=33V , VGS=0V V V uA uA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance b VDS=VGS , ID=0.2mA VGS=10V , ID=12A VGS=6V , ID=12A 1 1.6 5.0 6.5 3 6.5 9.0 V m ohm m ohm pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Revers...