Dual N-Channel Enhancement Mode Field Effect Transistor
Description
S T A6610
S amHop Microelectronics C orp. Nov.24 2006
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
30V
F E AT UR E S S uper high dense cell design for low R DS (ON ).
ID
7.6A
R DS (ON) ( m Ω ) Max
23 @ V G S = 10V 35 @ V G S = 4.5V
R ugged and reliable. S urface Mount P ackage. E S D P rotected.
D1
8
D1
7
D2
6...
