Dual N-Channel Enhancement Mode Field Effect Transistor
Description
Gre r e Pro
STF2458A
Ver 1.0
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
10.0 @ VGS=4.5V 10.5 @ VGS=4.0V 24V 10A 11.0 @ VGS=3.7V 12.0 @ VGS=3.1V 15.5 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Pro...
