ALD110904

ADVANCED LINEAR DEVICES, INC. ALD110804/ALD110904 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® VGS(th)= +0.40V PRECISION MATCHED PAIR MOSFET ARRAY APPLICATIONS Ultra low power (nanowatt) analog and digital circuits Ultra low operating voltage(<0.40V) circuits Sub-threshold biased and operated circuits Precision current mirrors and current sources Nano-Amp current sources High impedance resistor simulators Capacitive probes and sensor interfaces Differential amplifier input stages Discrete Voltage comparators and level shifters Voltage bias circuits Sample and Hold circuits Analog and digital inverters Charge detectors and charge integrators Source followers and High Impedance buffers Current multipliers Discrete Analog switches / multiplexers e TM EPAD EN ® AB LE D GENERAL DESCRIPTION ALD110804/ALD110904 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. The ALD110804/ALD110904 MOSFETS are designed and built for exceptional device electrical characteristics matching. Since these devices are on the same monolithic chip, they also exhibit excellent tempco tracking characteristics. They are versatile circuit elements useful as design components for a broad range of analog applications, such as basic building blocks for current sources, differential amplifier input stages, transmissio...