STU10N25

Green Product STU10N25 STD10N25 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 250V ID 9A R DS(ON) (m Ω) Max 258 @ VGS=10V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a e Limit 250 ±20 TC=25°C TC=100°C 9 5.7 25 20 TC=25°C TC=100°C 42 17 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 50 °C/W °C/W Details are subject to change without notice. Oct,24,2013 1 www.samhop.com.tw STU10N25 STD10N25 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions Min 250 1 ±100 Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current VGS=0V , ID=10mA VDS=200V , VGS=0V V uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=...