Green Product
STU/D04N20
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect...
Green Product
STU/D04N20
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
200V
ID
4A
R DS(ON) ( Ω) Typ
1.4 @ VGS=10V 1.6 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package.
G S
G D
S
STU SERIES TO - 252AA( D - PAK )
STD SERIES TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
a
Limit 200 ±20 TC=25°C TC=70°C TC=25°C TC=70°C 4 3.3 11 50 35 -55 to 175
Units V V A A A W W °C
Maximum Power Dissipation Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 50 °C/W °C/W
Details are subject to change without notice.
Oct,26,2012
1
www.samhop.com.tw
STU/D04N20
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=160V , VGS=0V
200 1 ±100
V uA nA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
b
VDS=VGS , ID=250uA VGS=10V , ID=2A VGS=4.5V , ID=2A VDS=10V , ID=2A
1
1.8 1....