Green Product
STU668S STD668S
Ver 1.0
SamHop Microelectronics Corp.
N-Channel Logic Level Enhancement Mode Field Effe...
Green Product
STU668S STD668S
Ver 1.0
SamHop Microelectronics Corp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
VDSS
60V
ID
50A
RDS(ON) (mΩ) Max
9.0 @ VGS=10V 13.2 @ VGS=4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package.
G S
G D
S
STU SERIES TO-252AA(D-PAK)
STD SERIES TO-251(I-PAK)
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a e
Limit 60 ±20 TC=25°C TC=70°C 50 40 146 289 TC=25°C TC=70°C 42 27 -55 to 150
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 50 °C/W °C/W
Details are subject to change without notice.
Sep,16,2013
1
www.samhop.com.tw
STU668S STD668S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=48V , VGS=0V
60 1 ±100
V uA nA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS , ID=250uA VGS=10V , ID=25A VGS=4.5V , ID...