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STU03L01 Dataheets PDF



Part Number STU03L01
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet STU03L01 DatasheetSTU03L01 Datasheet (PDF)

Green Product STU03L01 STD03L01 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 2A R DS(ON) ( Ω) Max 0.9 @ VGS=10V 1.1 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. ESD Protected. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS I.

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Green Product STU03L01 STD03L01 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 2A R DS(ON) ( Ω) Max 0.9 @ VGS=10V 1.1 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. ESD Protected. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a d Limit 100 ±20 TC=25°C TC=70°C TC=25°C TC=70°C 2 1.6 5.8 42 27 -55 to 150 Units V V A A A W W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 50 °C/W °C/W Details are subject to change without notice. Jul,03,2013 1 www.samhop.com.tw STU03L01 STD03L01 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=80V , VGS=0V 100 1 ±10 V uA uA VGS= ±20V , VDS=0V ON CHARACTERISTICS VGS(th) RDS(ON) gFS Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=1A VGS=4.5V , ID=0.9A VDS=10V , ID=1A 1 2 0.72 0.81 3.5 3 0.9 1.1 V ohm ohm S DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=25V,VGS=0V f=1.0MHz 200 28 17 pF pF pF VDD=50V ID=1A VGS=10V RGEN= 6 ohm VDS=50V,ID=1A,VGS=10V VDS=50V,ID=1A, VGS=10V 20 19.5 178 46 4 1 1.4 ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=1A 0.88 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 300us, Duty Cycle < _ 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Drain current limited by maximum junction temperature. Jul,03,2013 2 www.samhop.com.tw STU03L01 STD03L01 Ver 1.0 2.5 VGS=10V 2.5 ID, Drain Current(A) VGS=4.5V 1.5 VGS=4V ID, Drain Current(A) 2.0 2.0 1.5 Tj=125 C 1.0 25 C 0.5 -55 C 1.0 VGS=3.5V 0.5 0 0 0.5 1 1.5 2 2.5 3 0 0 0.8 1.6 2.4 3.2 4.0 4.8 VDS, Drain-to-Source Voltage(V) V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 1.8 Figure 2. Transfer Characteristics 2.25 R DS(on), On-Resistance Normalized 1.5 1.2 2.00 1.75 1.50 1.25 1.00 0 V G S =4.5V I D =0.9A V G S =10V I D =1A RDS(on)( Ω) V G S =4.5V 0.9 0.6 0.3 0 V G S =10V 0.01 0.5 1 1.5 2.0 2.5 0 25 50 75 100 125 I D, Drain Current(A) 150 T j ( °C ) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jul,03,2013 3 www.samhop.com.tw STU03L01 STD03L01 Ver 1.0 3.0 2.5 2.0 20.0 Is, Source-drain current(A) I D =1A 125 C 10.0 RDS(on)( Ω) 125 C 1.5 75 C 1.0 25 C 0.5 0 0 2 4 6 8 10 5.0 75 C 25 C 1.0 0 0.6 1.2 1.8 2.4 3.0 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 240 210 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 8 6 4 2 0 VDS=50V ID=1A C, Capacitance(pF) 180 150 120 90 60 30 0 0 5 10 Crss Coss Ciss 15 20 25 30 V GS, Gate to Source Voltage(V) 0 1 2 3 4 5 6 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 300 TD(off ) 30 10 I D, Drain Current(A) 100 Switching Time(ns) Tf Tr TD(on) 1 R DS ( ) ON L im it 1m D C ms 10 s 10 0.1 VDS=50V,ID=1A VGS=10V 1 1 10 100 0.01 0.1 VGS=10V Single Pulse TC=25 C 1 10 100 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jul,03,2013 4 www.samhop.com.tw STU03L01 STD03L01 Ver 1.0 2 1 D=0.5 Normalized Transient Thermal Resistance 0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 t2 1. 2. 3. 4. 10 10 10 R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 1 10 10 .


SB380 STU03L01 STD03L01


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