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Green Product
STU03L01 STD03L01
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
100V
ID
2A
R DS(ON) ( Ω) Max
0.9 @ VGS=10V 1.1 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. ESD Protected.
G S
G D
S
STU SERIES TO - 252AA( D - PAK )
STD SERIES TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a d
Limit 100 ±20 TC=25°C TC=70°C TC=25°C TC=70°C 2 1.6 5.8 42 27 -55 to 150
Units V V A A A W W °C
Maximum Power Dissipation Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 50 °C/W °C/W
Details are subject to change without notice.
Jul,03,2013
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STU03L01 STD03L01
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=80V , VGS=0V
100 1 ±10
V uA uA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS VGS(th) RDS(ON) gFS Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS , ID=250uA VGS=10V , ID=1A VGS=4.5V , ID=0.9A VDS=10V , ID=1A
1
2 0.72 0.81 3.5
3 0.9 1.1
V ohm ohm S
DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
c
VDS=25V,VGS=0V f=1.0MHz
200 28 17
pF pF pF
VDD=50V ID=1A VGS=10V RGEN= 6 ohm VDS=50V,ID=1A,VGS=10V VDS=50V,ID=1A, VGS=10V
20 19.5 178 46 4 1 1.4
ns ns ns ns nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=1A
0.88
1.3
V
Notes
_ 10sec. a.Surface Mounted on FR4 Board,t < _ 300us, Duty Cycle < _ 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Drain current limited by maximum junction temperature.
Jul,03,2013
2
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STU03L01 STD03L01
Ver 1.0
2.5 VGS=10V 2.5
ID, Drain Current(A)
VGS=4.5V 1.5
VGS=4V
ID, Drain Current(A)
2.0
2.0
1.5 Tj=125 C 1.0 25 C 0.5 -55 C
1.0
VGS=3.5V
0.5 0
0
0.5
1
1.5
2
2.5
3
0
0
0.8
1.6
2.4
3.2
4.0
4.8
VDS, Drain-to-Source Voltage(V)
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
1.8
Figure 2. Transfer Characteristics
2.25
R DS(on), On-Resistance Normalized
1.5 1.2
2.00 1.75 1.50 1.25 1.00 0
V G S =4.5V I D =0.9A V G S =10V I D =1A
RDS(on)( Ω)
V G S =4.5V 0.9 0.6 0.3 0 V G S =10V
0.01
0.5
1
1.5
2.0
2.5
0
25
50
75
100
125
I D, Drain Current(A)
150 T j ( °C )
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
Figure 4. On-Resistance Variation with Drain Current and Temperature
BVDSS, Normalized Drain-Source Breakdown Voltage
Vth, Normalized Gate-Source Threshold Voltage
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA
1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature( ° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation with Temperature
Figure 6. Breakdown Voltage Variation with Temperature
Jul,03,2013
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STU03L01 STD03L01
Ver 1.0
3.0 2.5 2.0 20.0
Is, Source-drain current(A)
I D =1A
125 C 10.0
RDS(on)( Ω)
125 C 1.5 75 C 1.0 25 C 0.5 0 0 2 4 6 8 10
5.0
75 C
25 C 1.0 0 0.6 1.2 1.8 2.4 3.0
VGS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
240 210
Figure 8. Body Diode Forward Voltage Variation with Source Current
10 8 6 4 2 0 VDS=50V ID=1A
C, Capacitance(pF)
180 150 120 90 60 30 0 0 5 10 Crss Coss
Ciss
15
20
25
30
V GS, Gate to Source Voltage(V)
0
1
2
3
4
5
6
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
300
TD(off )
30 10
I D, Drain Current(A)
100
Switching Time(ns)
Tf
Tr
TD(on)
1
R
DS
(
) ON
L im
it
1m
D C ms
10
s
10
0.1
VDS=50V,ID=1A VGS=10V
1 1 10 100 0.01 0.1
VGS=10V Single Pulse TC=25 C
1 10 100
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Jul,03,2013
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STU03L01 STD03L01
Ver 1.0
2 1 D=0.5
Normalized Transient Thermal Resistance
0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 S ING LE P ULS E 0.01 10
-5 -4 -3 -2 -1
t2 1. 2. 3. 4. 10 10 10 R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 1 10
10
.