STD616S

Green Product STU/D616S Ver1.1 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V ID 16A R DS(ON) (m Ω) Typ 64 @ VGS=10V 81 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D G S G D S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) ABSOLUTE Symbol VDS VGS ID IDM IAS EAS PD TJ, TSTG MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Parameter Limit Drain-Source Voltage 60 Gate-Source Voltage ±20 a Drain Current-Continuous TA=25 °C 16 -Pulsed Avalanche Current Avalanche Energy c c a b Units V V A A A mJ W °C 46.8 9 20.25 TA=25 °C 60 -55 to 175 Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 2.5 50 °C/W °C/W Feb,12,2010 1 www.samhop.com.tw Downloaded from Elcodis.com electronic components distributor STU/D616S ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VGS=0V , ID=10mA VDS=48V , VGS=0V Ver1.1 Min 60 65 Typ Max Units V V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS e BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body leakage current a VGS= ±20V , VDS=0V 1 ±10 1.8 64 81 13.5 780 58.5 46.5 14 13 38 9.4 13.5 6.7 1.88 3.71 1.5 1.3 A uA ON CHARACTERI...