Green Product
STP06N20 STF06N20
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Tran...
Green Product
STP06N20 STF06N20
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
200V
ID
5A
R DS(ON) ( Ω) Typ
1.1 @ VGS=10V 1.3 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-220F Package.
D
G D S
G D S
G
STP SERIES TO-220
STF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
a a
STP06N20 STF06N20 200 ±20 ±20 TC=25°C TC=100°C TC=25°C TC=100°C 5 3.5 15 75 37.5 5 3.5 15 25 12.5
Units V V A A A W W °C
Maximum Power Dissipation Operating Junction and Storage Temperature Range
-55 to 175
THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient
2 62.5
6 62.5
°C/W °C/W
Details are subject to change without notice.
Oct,28,2013
1
www.samhop.com.tw
STP06N20 STF06N20
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
4 Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current
VGS=0V , ID=10mA VDS=160V , VGS=0V
200 1 ±100
V uA nA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance RDS(ON) Drain-Source On-State Resistance gFS Forward Transconduc...