STP06N20

Green Product STP06N20 STF06N20 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 200V ID 5A R DS(ON) ( Ω) Typ 1.1 @ VGS=10V 1.3 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-220F Package. D G D S G D S G STP SERIES TO-220 STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a a STP06N20 STF06N20 200 ±20 ±20 TC=25°C TC=100°C TC=25°C TC=100°C 5 3.5 15 75 37.5 5 3.5 15 25 12.5 Units V V A A A W W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range -55 to 175 THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 2 62.5 6 62.5 °C/W °C/W Details are subject to change without notice. Oct,28,2013 1 www.samhop.com.tw STP06N20 STF06N20 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current VGS=0V , ID=10mA VDS=160V , VGS=0V 200 1 ±100 V uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance RDS(ON) Drain-Source On-State Resistance gFS Forward Transconduc...