STS8235
S a mHop Microelectronics C orp.
Ver 1.0
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMA...
STS8235
S a mHop Microelectronics C orp.
Ver 1.0
Dual N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
30V
F E AT UR E S S uper high dense cell design for low R DS (ON ).
ID
4.5A
R DS(ON) (m Ω) Max
36 @ VGS=4.5V 46 @ VGS=2.5V
R ugged and reliable. S urface Mount P ackage. E S D P rotected.
S OT26 Top View
D1
D2
S1 D1/D2 S2
1 2 3
6 5 4
G1 D1/D2 G2
G1
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
Limit 30 ±10 TA=25°C TA=70°C TA=25°C TA=70°C 4.5 3.6 18
a
Units V V A A A A W °C
Maximum Power Dissipation
1.25 0.8 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
100
°C/W
Details are subject to change without notice.
Aug,14,2008
1
www.samhop.com.tw
STS8235
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
4 Symbol
Parameter
Conditions
VGS=0V , ID=250uA VDS=24V , VGS=0V
Min 30
Typ
Max
Units V
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance
VGS= ±10V , VDS=0V
1 ±10 0.5 0.7 30 36 15 440 80 56 10 12.5 15.5 30 6.7 4.6 1.5 2.2 1.25 0.78 1.2 1.5 36 46
uA uA V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC A ...