Green Product
STP45L01F
Ver1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PR...
Green Product
STP45L01F
Ver1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
100V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220F Package.
ID
40A
R DS(ON) (m Ω) Typ
20 @ VGS=10V
D
G D S
G
STF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy
d b a
Limit 100 ±20 T C =25 °C T C =70 °C 40 32 118 560
a
Units V V A A A mJ W W °C
Maximum Power Dissipation
TC=25°C TC=70°C
62.5 40 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient
a
2 50
°C/W °C/W
Details are subject to change without notice.
Jun,03,2010
1
www.samhop.com.tw
STP45L01F
Ver1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units V 1 ±100 uA nA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=80V , VGS=0V
100
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS , ID=250uA VGS=10V , ID=20A VDS=10V , ID=20A
2
2.9 20 24 3200 241 176
4 25
V m ohm S pF pF pF
DYNA...