STP656F

Gr Pr STP656F Ver 1.0 SamHop Microelectronics Corp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220F Package. ID 22A R DS(ON) (m ) Max 19 @ VGS=10V 29 @ VGS=4.5V D G D S G STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy d Maximum Power Dissipation a b a Limit 60 ±20 T C =25 °C T C =70 °C 22 17.7 66 182 TC=25°C TC=70°C 21 13.3 -55 to 150 Units V V A A A mJ W W °C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a 6 65 °C/W °C/W Details are subject to change without notice. Dec,01,2010 1 www.samhop.com.tw STP656F Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=48V , VGS=0V Min 60 Typ Max Units V OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current 1 ±100 uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=11A VGS=4.5V , ID=9A VDS=20V , ID=11A 1 1.8 15 21 31 2180 196 132 3 19 29 V...