BSM10GD120DN2E3224

BSM 10 GD 120 DN2 E3224 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type BSM 10 GD 120 DN2 BSM 10 GD120DN2E3224 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 kΩ Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C Power dissipation per IGBT TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis Ptot 80 + 150 -40 ... + 125 ≤ 1.52 ≤2 2500 16 11 F 40 / 125 / 56 sec Vac mm K/W °C ICpuls 30 20 W VGE IC 15 10 Symbol VCE VCGR 1200 ± 20 A Values 1200 Unit V VCE IC Package ECONOPACK 2 ECONOPACK 2K Ordering Code C67076-A2513-A67 C67070-A2513-A67 1200V 15A 1200V 15A 1 2006-02-01 BSM 10 GD 120 DN2 E3224 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage VGE = VCE, IC = 0.32 mA Collector-emitter saturation voltage VGE = 15 V, IC = 10 A, Tj = 25 °C VGE = 15 V, IC = 10 A, Tj = 125 °C Zero gate voltage collector current VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current VGE = 20 V, VCE = 0 V AC Characteristics Transconductance VCE = 20 V, IC = 1...