20V N-Channel MOSFET
20V N-Cha
SI2302
VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ RDS(ON), Vgs@ 2.5V, Ids@ 2.0A
3.6A
85m Ω 115mΩ
Features Advanced tr...
Description
20V N-Cha
SI2302
VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ RDS(ON), Vgs@ 2.5V, Ids@ 2.0A
3.6A
85m Ω 115mΩ
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions
D
G
S
SOT-23
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0e 10e
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1)
Symbol
Limit
Unit
VDS VGS ID IDM
2)
20 ±8 2.3 8 1.25 0.8 -55 to 150 100
o
V
A
TA = 25o TA = 75oC
2)
Maximum Power Dissipation
PD TJ, Tstg
RthJA
W
o
Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) Junction-to-Ambient Thermal Resistance (PCB mounted)
C
3)
166
C/W
Notes 1) Pulse width limited by maximum u j nction temperature. 2) Surface Mounted on FR4 Board, t 5 sec. 3) Surface Mounted on FR4 Board.
1
www.vtr.so
SI2302
20V N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current 0 Gate Body Leakage Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance O...
Similar Datasheet