STT3414

Gre r Pro STT3414 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 33 @ VGS=10V 30V 7A 42 @ VGS=4.5V 57 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D D G G D S S STT SERIES SOT-223 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 30 ±12 TA=25°C TA=70°C 7 5.6 28 9 TA=25°C TA=70°C 3 1.9 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 42 °C/W Details are subject to change without notice. Aug,23,2011 1 www.samhop.com.tw STT3414 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=24V , VGS=0V 30 1 ±100 V uA nA VGS= ±12V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=3.5A VGS=4.5V , ID=3.1A VGS=2.5V , ID=2.6A VDS=5V , ID=3.5A 0.5 0.9 26 31 42 16 1.5 33 42 ...