STT60GK14B

STT60GKxxB Thyristor-Thyristor Modules Type VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800 Tolerance:+0.5mm Dimensions in mm (1mm=0.0394") STT60GK08B STT60GK12B STT60GK14B STT60GK16B STT60GK18B Symbol ITRMS, IFRMS T VJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine ITSM, IFSM o T VJ=45 C VR=0 T VJ=TVJM VR=0 o T VJ=45 C VR=0 T VJ=TVJM VR=0 Test Conditions Maximum Ratings 94 60 Unit A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine repetitive, IT=150A non repetitive, IT=ITAVM 1500 1600 1350 1450 11200 10750 9100 8830 150 500 1000 10 5 0.5 10 -40...+125 125 -40...+125 A i dt 2 A2s (di/dt)cr T VJ=TVJM f=50Hz, tp=200us VD=2/3VDRM IG=0.45A diG/dt=0.45A/us A/us (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md T VJ=TVJM; VDR=2/3VDRM R GK= ; method 1 (linear voltage rise) T VJ=TVJM IT=ITAVM tp=30us tp=300us V/us W W V o C 50/60Hz, RMS _ I ISOL<1mA t=1min t=1s 3000 3600 2.5-4.0/22-35 2.5-4.0/22-35 110 V~ Nm/lb.in. g Mounting torque (M5) Terminal connection torque (M5) Weight Typ. STT60GKxxB Thyristor-Thyristor Modules Symbol VTM VTO rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a per thyristor/diode; DC current per module per thyristor/diode; DC current per module Creeping distance on surface Strike distance through air Maximum allowable acceleration TVJ=25oC; tp=10us; VD=6V IG=0.45A; diG/dt=0.45A/us TVJ=25oC; VD=6V; RGK= TVJ=2...