Green Product
STT622S
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Tr...
Green Product
STT622S
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
60V
ID
4.2A
R DS(ON) (m Ω) Max
76 @ VGS=10V 100 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package.
D
G G S
STT SERIES SO T - 223
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
Limit 60 ±20 TA=25°C TA=70°C 4.2 3.4 28 16 TA=25°C TA=70°C 3 1.9 -55 to 150
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
42
°C/W
Details are subject to change without notice.
Jul,30,2010
1
www.samhop.com.tw
STT622S
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=48V , VGS=0V
60 1 ±100
V uA nA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS , ID=250uA VGS=10V , ID=4.2A VGS=4.5V , ID=3.7A VDS=5V , ID=4.2A
1
1.9 61 74 10.5 720 52 39
3 76 100
V m ohm m ohm S ...