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STT6601 Dataheets PDF



Part Number STT6601
Manufacturers SeCoS
Logo SeCoS
Description MOSFET
Datasheet STT6601 DatasheetSTT6601 Datasheet (PDF)

STT6601 Elektronische Bauelemente (N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ (P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT6601 is the N and P Channel enhancement mode power FET produced using high cell-density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particu.

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STT6601 Elektronische Bauelemente (N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ (P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT6601 is the N and P Channel enhancement mode power FET produced using high cell-density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery-powered circuits where high-side switching, low in-line power loss and resistance to transients are needed. FEATURES z APPLICATIONS z z z z z z z z N-Channel 30V/2.8A, RDS(ON) = 68mΩ@VGS = 10 V 30V/2.3A, RDS(ON) = 78mΩ@VGS = 4.5 V 30V/1.5A, RDS(ON) = 108mΩ@VGS = 2.5 V P-Channel -30V/-2.8A, RDS(ON) = 105mΩ@VGS = 10 V -30V/-2.5A, RDS(ON) = 120mΩ@VGS = 4.5 V -30V/-1.5A, RDS(ON) = 150mΩ@VGS = 2.5 V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TSOP-6P package design Battery powered systems Portable devices Power management in NB DC to DC converter, load switch, DSC, LCD display inverter PACKAGE DIMENSIONS REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 Max 0 0.10 0.70 1.00 0.12 Ref 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 Ref 0.60 Ref 0° 10° 0.30 0.50 0.95 Ref 1.90 Ref Week code: A~Z (1~26); a ~ z (27 ~ 52) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Power Dissipation Continuous Source Current (Diode Conduction) Thermal Resistance- Junction to Ambient T ≦ 10 sec Steady State Symbol VDS VGS ID @TA=25℃ ID @TA=70℃ IDM PD @TA=25℃ PD @TA=70℃ IS RθJA Tj, Tstg Ratings N-Channel P-Channel Unit V V A A W A ℃/W ℃ 30 ±12 2.8 2.3 10 1.15 0.75 -30 ±12 -2.8 -2.1 -8 Operating Junction and Storage Temperature Range 1.25 -1.4 50 52 90 90 -55 ~ +150 01-June-2007 Rev. C Page 1 of 6 STT6601 Elektronische Bauelemente (N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ (P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Zero Gate Voltage Drain Current P-Ch (Tj=25℃) Symbol BVDSS VGS(th) gfs IGSS Min. 30 -30 0.8 -0.4 - Typ. - Max. 1.6 -1.0 Unit V Test Conditions VGS=0, ID=250uA VGS=0, ID=-250uA VDS=VGS, ID=250uA VDS=VGS, ID=-250uA VDS=4.5V, ID=-6.0A VDS=-10V, ID=-2.8A VDS= 0 V, VGS=±12 V VDS= 0 V, VGS=±12 V VDS=24 V, VGS=0 V VDS=-24V, VGS=0 V VDS=24V, VGS=0 V, TJ=55℃ VDS=-24V, VGS=0 V, TJ=55℃ VDS ≧ 5V, VGS=10 V VDS ≦ -5V, VGS= -10 V VGS=10V, ID=2.8A VGS=-10V, ID=-2.8A VGS=4.5V, ID=2.3A VGS=-4.5V, ID=-2.5A VGS=2.5V, ID=1.5A VGS=-2.5V, ID=-1.5A V Forward Transconductance 4.6 4 0.048 0.07.


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