STT6405

STT6405 Elektronische Bauelemente -5.0 A, -30 V, RDS(ON) 50 mΩ P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT6405 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. FEATURES z z z N-Channel Lower Gate Charge Small Footprint & Low Profile Package PACKAGE DIMENSIONS REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 Max 0 0.10 0.70 1.00 0.12 Ref 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 Ref 0.60 Ref 0° 10° 0.30 0.50 0.95 Ref 1.90 Ref ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25℃ ID @TA=70℃ IDM PD @TA=25℃ Tj, Tstg Symbol Ratings -30 ±12 -5.0 -4.2 -20 2 0.016 -55 ~ +150 Ratings 62.5 Unit V V A A W W/℃ ℃ Parameter Thermal Resistance- Junction to Ambient 3 Max. Unit ℃/W RθJA 01-June-2005 Rev. A Page 1 of 4 STT6405 Elektronische Bauelemente -5.0 A, -30 V, RDS(ON) 50 mΩ P-Channel Enhancement Mode Mos.FET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25℃) Drain-Source Leakage Current (Tj=55℃) Symbol Min BVDSS ...