Document
Green Product
STT03L06
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
60V
ID
3A
R DS(ON) (m Ω) Max
100 @ VGS=10V 125 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package.
D
G G S
STT SERIES SOT - 223
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a e
Limit 60 ±20 TA=25°C TA=70°C 3 2.4 20 12 TA=25°C TA=70°C 3 1.9 -55 to 150
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
42
°C/W
Details are subject to change without notice.
Jul,10,2013
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STT03L06
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=48V , VGS=0V
60 1 ±100
V uA nA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS , ID=250uA VGS=10V , ID=1.5A VGS=4.5V , ID=1.3A VDS=10V , ID=1.5A
1
1.7 81 94 5.2 496 44 31
3 100 125
V m ohm m ohm S pF pF pF
DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
c
VDS=25V,VGS=0V f=1.0MHz
VDD=50V ID=1A VGS=10V RGEN= 6 ohm VDS=50V,ID=1.5A,VGS=10V VDS=50V,ID=1.5A,VGS=4.5V VDS=50V,ID=1.5A, VGS=10V
10.4 11.6 18 9.2 7.3 4 1.1 1.9
ns ns ns ns nC nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=2A
0.83
1.2
V
Notes
_ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13) e.Drain current limited by maximum junction temperature.
Jul,10,2013
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STT03L06
Ver 1.0
15 VGS=10V 15
ID, Drain Current(A)
VGS=4.5V
VGS=4V VGS=3.5V
ID, Drain Current(A)
12
12
9
9 Tj=125 C 6 -55 C 3 25 C 0
6 VGS=3V
3
0 0 0.5 1.0 1.5 2.0 2.5 3.0
0
0.8
1.6
2.4
3.2
4.0
4.8
VDS, Drain-to-Source Voltage(V)
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
240
Figure 2. Transfer Characteristics
2.0
R DS(on)(m Ω)
160 120 80 V G S =10V 40 1 0.1 V G S =4.5V
R DS(on), On-Resistance Normalized
200
1.8 1.6 1.4 1.2 1.0 0
V G S =10V I D =1.5A
V G S =4.5V I D =1.3A
3
6
9
12
15
0
25
50
75
100
125
I D, Drain Current(A)
150 T j ( °C )
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
Figure 4. On-Resistance Variation with Drain Current and Temperature
BVDSS, Normalized Drain-Source Breakdown Voltage
Vth, Normalized Gate-Source Threshold Voltage
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA
1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature( ° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation with Temperature
Figure 6. Breakdown Voltage Variation with Temperature
Jul,10,2013
3
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STT03L06
Ver 1.0
300 250 200 20.0
Is, Source-drain current(A)
I D =1.5A
10.0
RDS(on)(m Ω)
125 C 150 100 50 0
75 C
5.0 125 C 25 C 75 C 1.0 0 0.3 0.6 0.9 1.2 1.5
25 C
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
720
Figure 8. Body Diode Forward Voltage Variation with Source Current
10 8 6 4 2 0 0 1 2 3 4 5 6 7 8
Qg, Total Gate Charge(nC)
V GS, Gate to Source Voltage(V)
600
C, Capacitance(pF)
Ciss 480 360 240 Coss 120 Crss 0 0 5 10 15 20 25 30
VDS=50V ID=1.5A
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Figure 10. Gate Charge
100 100
TD(off )
100
it
10
10
10
DC
I D, Drain Current(A)
10
R
DS
Switching Time(ns)
(
) ON
L im
1m
ms
s
0m
Tr
10
Tf
TD(on)
1s
s
s
1
0.1
VDS=50V,ID=1A VGS=10V
1 1 10 100 0.01 0.1
VGS=10V Single Pulse TA=25 C
1 10 100
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Jul,10,2013
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STT03L06
Ver 1.0
V ( BR )D S S
tp
L
V DS
RG
20V
D .U .T
IA S
tp
+ -
VDD
0.0 1
IAS
Unclamped Inductive Waveforms F igure 13b.
Unclamped Inductive Test Circuit F igure 13a.
1
0.5
Normalized Transient Thermal Resistance
0.2
0.1
0.1 0.05 0.02 P DM t1 t2
0.01
0.01
Single Pulse
1. RthJA (t)=r (t).