DatasheetsPDF.com

STT03L06 Dataheets PDF



Part Number STT03L06
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel MOSFET
Datasheet STT03L06 DatasheetSTT03L06 Datasheet (PDF)

Green Product STT03L06 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V ID 3A R DS(ON) (m Ω) Max 100 @ VGS=10V 125 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D G G S STT SERIES SOT - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage .

  STT03L06   STT03L06



Document
Green Product STT03L06 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V ID 3A R DS(ON) (m Ω) Max 100 @ VGS=10V 125 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D G G S STT SERIES SOT - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a e Limit 60 ±20 TA=25°C TA=70°C 3 2.4 20 12 TA=25°C TA=70°C 3 1.9 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 42 °C/W Details are subject to change without notice. Jul,10,2013 1 www.samhop.com.tw STT03L06 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=48V , VGS=0V 60 1 ±100 V uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=1.5A VGS=4.5V , ID=1.3A VDS=10V , ID=1.5A 1 1.7 81 94 5.2 496 44 31 3 100 125 V m ohm m ohm S pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=25V,VGS=0V f=1.0MHz VDD=50V ID=1A VGS=10V RGEN= 6 ohm VDS=50V,ID=1.5A,VGS=10V VDS=50V,ID=1.5A,VGS=4.5V VDS=50V,ID=1.5A, VGS=10V 10.4 11.6 18 9.2 7.3 4 1.1 1.9 ns ns ns ns nC nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=2A 0.83 1.2 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13) e.Drain current limited by maximum junction temperature. Jul,10,2013 2 www.samhop.com.tw STT03L06 Ver 1.0 15 VGS=10V 15 ID, Drain Current(A) VGS=4.5V VGS=4V VGS=3.5V ID, Drain Current(A) 12 12 9 9 Tj=125 C 6 -55 C 3 25 C 0 6 VGS=3V 3 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.8 1.6 2.4 3.2 4.0 4.8 VDS, Drain-to-Source Voltage(V) V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 240 Figure 2. Transfer Characteristics 2.0 R DS(on)(m Ω) 160 120 80 V G S =10V 40 1 0.1 V G S =4.5V R DS(on), On-Resistance Normalized 200 1.8 1.6 1.4 1.2 1.0 0 V G S =10V I D =1.5A V G S =4.5V I D =1.3A 3 6 9 12 15 0 25 50 75 100 125 I D, Drain Current(A) 150 T j ( °C ) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jul,10,2013 3 www.samhop.com.tw STT03L06 Ver 1.0 300 250 200 20.0 Is, Source-drain current(A) I D =1.5A 10.0 RDS(on)(m Ω) 125 C 150 100 50 0 75 C 5.0 125 C 25 C 75 C 1.0 0 0.3 0.6 0.9 1.2 1.5 25 C 0 2 4 6 8 10 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 720 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 Qg, Total Gate Charge(nC) V GS, Gate to Source Voltage(V) 600 C, Capacitance(pF) Ciss 480 360 240 Coss 120 Crss 0 0 5 10 15 20 25 30 VDS=50V ID=1.5A VDS, Drain-to-Source Voltage(V) Figure 9. Capacitance Figure 10. Gate Charge 100 100 TD(off ) 100 it 10 10 10 DC I D, Drain Current(A) 10 R DS Switching Time(ns) ( ) ON L im 1m ms s 0m Tr 10 Tf TD(on) 1s s s 1 0.1 VDS=50V,ID=1A VGS=10V 1 1 10 100 0.01 0.1 VGS=10V Single Pulse TA=25 C 1 10 100 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jul,10,2013 4 www.samhop.com.tw STT03L06 Ver 1.0 V ( BR )D S S tp L V DS RG 20V D .U .T IA S tp + - VDD 0.0 1 IAS Unclamped Inductive Waveforms F igure 13b. Unclamped Inductive Test Circuit F igure 13a. 1 0.5 Normalized Transient Thermal Resistance 0.2 0.1 0.1 0.05 0.02 P DM t1 t2 0.01 0.01 Single Pulse 1. RthJA (t)=r (t).


STT468A STT03L06 STT6405


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)