STT812A

Green Product STT812A Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 80V ID 1.4A R DS(ON) (m Ω) Max 569 @ VGS=10V 674 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D G G S STT SERIES SOT - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a d Limit 80 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 1.4 1.1 9.4 a Units V V A A A W W °C Maximum Power Dissipation 3 1.9 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 42 °C/W Details are subject to change without notice. Sep,13,2013 1 www.samhop.com.tw STT812A Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=64V , VGS=0V 80 1 ±10 V uA uA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=0.7A VGS=4.5V , ID=0.65A VDS=10V , ID=0.7A 1 1.9 455 499 2.4 3 569 674 V m ohm m ohm S pF pF pF DYNAMIC CHARACTERISTICS Input Capaci...