N-Channel MOSFET
STT3470N
Elektronische Bauelemente 2.2 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.FET
RoHS Compliant Produ...
Description
STT3470N
Elektronische Bauelemente 2.2 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
F A E
6 5 4
TSOP-6
L
B
1
2
3
C K
H J
FEATURES
DG
Low RDS(on) provides higher efficiency and extend battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50
REF. G H J K L
Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF.
PACKAGE INFORMATION
Package TSOP-6 MPQ 3K LeaderSize 7’ inch
D D G D D S
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 Operating Junction and Storage Temperature Range
Symbol VDS VGS ID IDM IS PD Tj, Tstg
Ratings 100 ±20 2.2 ±10 1.1 2 -55 ~ 150
Unit
V V A A A W °C
TA= 25°C
TA= 25°C
Thermal Resistance Ratings Parameter
Maximum Junction to Ambient...
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